PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 400V Collector Emitter Breakdown Voltage (V(BR)CEO) and 400V Collector Emitter Voltage (VCEO). Offers a continuous collector current of -500mA and a maximum power dissipation of 1W. Operates across a temperature range of -55°C to 200°C with a transition frequency of 50MHz. Packaged in a TO-92 compatible E-LINE package for through-hole mounting.
Frequency50MHz
PackageTO-92
Current Rating-500mA
MountingThrough Hole
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Technical Specifications
Diodes ZTX758 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 50MHz |
| Height | 4.01mm |
| Length | 4.77mm |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -400V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX758 Datasheet
Download the complete datasheet for Diodes ZTX758 to view detailed technical specifications.
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