PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 400V Collector Emitter Breakdown Voltage (V(BR)CEO) and 400V Collector Emitter Voltage (VCEO). Offers a continuous collector current of -500mA and a maximum power dissipation of 1W. Operates across a temperature range of -55°C to 200°C with a transition frequency of 50MHz. Packaged in a TO-92 compatible E-LINE package for through-hole mounting.
Sign in to ask questions about the Diodes ZTX758 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes ZTX758 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 50MHz |
| Height | 4.01mm |
| Length | 4.77mm |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -400V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX758 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
