NPN silicon bipolar junction transistor in a TO-92 package. Features a continuous collector current of 5A, collector-emitter breakdown voltage of 30V, and a transition frequency of 100MHz. This through-hole mounted component offers a maximum power dissipation of 1.2W and operates across a temperature range of -55°C to 200°C. It is RoHS compliant and lead-free.
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Diodes ZTX849 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 180mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 220mV |
| Continuous Collector Current | 5A |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 30V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
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