NPN Silicon Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 300V collector-emitter breakdown voltage (VCEO) and 3A continuous collector current (IC). Operates with a 6V emitter-base voltage (VEBO) and offers a transition frequency (fT) of 80MHz. Housed in a TO-92 compatible E-LINE package, this 1-element transistor supports a maximum power dissipation of 1.2W and operates within a temperature range of -55°C to 200°C. RoHS compliant and lead-free.
Frequency80MHz
PackageTO-92
Current Rating5A
MountingThrough Hole
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Technical Specifications
Diodes ZTX857 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
330V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
3A
Current Rating
5A
Emitter Base Voltage (VEBO)
6V
Frequency
80MHz
Gain Bandwidth Product
80MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
3A
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.2W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
80MHz
DC Rated Voltage
300V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX857 Datasheet
Download the complete datasheet for Diodes ZTX857 to view detailed technical specifications.
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