NPN Silicon Bipolar Junction Transistor (BJT) for power applications. Features 3A continuous collector current, 300V collector-emitter breakdown voltage, and 330V collector-base voltage. Operates with a maximum power dissipation of 1.2W and a transition frequency of 80MHz. Housed in a TO-92 compatible E-LINE package with 3 pins, suitable for through-hole and surface mount configurations. RoHS and REACH SVHC compliant.
Frequency100MHz
PackageTO-92
Current Rating5A
MountingThrough Hole, Surface Mount
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Technical Specifications
Diodes ZTX857STZ technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 330V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 3A |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 80MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 3A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole, Surface Mount |
| Package Quantity | 2000 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 80MHz |
| DC Rated Voltage | 300V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX857STZ Datasheet
Download the complete datasheet for Diodes ZTX857STZ to view detailed technical specifications.
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