PNP Silicon Bipolar Junction Transistor, 200V Collector-Emitter Breakdown Voltage, 2A Continuous Collector Current, and 150°C Max Operating Temperature. This through-hole component features a 110MHz Gain Bandwidth Product and a -220V Collector Base Voltage. Housed in a TO-92 compatible plastic/epoxy package with 3 pins, it offers a Max Power Dissipation of 1.58W and is both Lead Free and RoHS Compliant.
PackageTO-92
Current Rating-2A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX956 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-220V
Collector Emitter Breakdown Voltage
200V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-2A
Current Rating
-2A
Emitter Base Voltage (VEBO)
-6V
Gain Bandwidth Product
110MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
2A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.58W
Mount
Through Hole
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
110MHz
DC Rated Voltage
-200V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX956 Datasheet
Download the complete datasheet for Diodes ZTX956 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.