PNP Silicon Bipolar Junction Transistor, 200V Collector-Emitter Breakdown Voltage, 2A Continuous Collector Current, and 150°C Max Operating Temperature. This through-hole component features a 110MHz Gain Bandwidth Product and a -220V Collector Base Voltage. Housed in a TO-92 compatible plastic/epoxy package with 3 pins, it offers a Max Power Dissipation of 1.58W and is both Lead Free and RoHS Compliant.
PackageTO-92
Current Rating-2A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX956 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -220V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | -2A |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 110MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.58W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 110MHz |
| DC Rated Voltage | -200V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX956 Datasheet
Download the complete datasheet for Diodes ZTX956 to view detailed technical specifications.
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