PNP silicon bipolar junction transistor (BJT) for through-hole mounting in a TO-92 compatible package. Features a 300V collector-emitter breakdown voltage (VCEO), 1A continuous collector current (IC), and a transition frequency (fT) of 85MHz. Offers a maximum power dissipation of 1.2W and operates across a temperature range of -55°C to 200°C. This component is lead-free, RoHS compliant, and REACH SVHC compliant.
Frequency85MHz
PackageTO-92
Current Rating-1A
MountingThrough Hole
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Technical Specifications
Diodes ZTX957 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
330V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
-140mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
200mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
-6V
Frequency
85MHz
Gain Bandwidth Product
85MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Breakdown Voltage
300V
Max Collector Current
1A
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.2W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Power Dissipation
1.2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
85MHz
DC Rated Voltage
-300V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX957 Datasheet
Download the complete datasheet for Diodes ZTX957 to view detailed technical specifications.
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