PNP Silicon Bipolar Junction Transistor, TO-92 compatible E-LINE package. Features a 300V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a -1A Continuous Collector Current (I(C)). Offers a -330V Collector Base Voltage (VCBO) and a -6V Emitter Base Voltage (VEBO). Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.2W. Includes a transition frequency of 85MHz.
Diodes ZTX957STZ technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -330V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 200mV |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 85MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 85MHz |
| DC Rated Voltage | -300V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX957STZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.