
PNP Silicon Bipolar Junction Transistor, 400V Collector-Emitter Breakdown Voltage, -500mA Continuous Collector Current, and 1.2W Max Power Dissipation. Features a -400mV Collector-Emitter Saturation Voltage and 85MHz Gain Bandwidth Product. Packaged in a 3-pin TO-92 compatible E-LINE package, suitable for through-hole mounting. RoHS and REACH SVHC compliant, with a lead-free construction.
Diodes ZTX958STZ technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector-emitter Voltage-Max | 400mV |
| Continuous Collector Current | -500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -6V |
| Gain Bandwidth Product | 85MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 85MHz |
| DC Rated Voltage | -400V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX958STZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
