NPN silicon bipolar junction transistor (BJT) for small signal applications. Features a 1.25A continuous collector current and 20V collector-emitter breakdown voltage. Operates with a 210MHz gain bandwidth product and a collector-emitter saturation voltage of 155mV. Packaged in a SOT-323 surface mount case, this RoHS and REACH SVHC compliant component offers a wide operating temperature range of -55°C to 150°C.
Frequency210MHz
PackageSOT-323
Current Rating1.25A
MountingSurface Mount
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Technical Specifications
Diodes ZUMT618TA technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
155mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
1.25A
Current Rating
1.25A
Emitter Base Voltage (VEBO)
5V
Frequency
210MHz
Gain Bandwidth Product
210MHz
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
20V
Max Collector Current
1.25A
Max Frequency
210MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
210MHz
DC Rated Voltage
20V
Weight
0.000212oz
Width
1.26mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZUMT618TA Datasheet
Download the complete datasheet for Diodes ZUMT618TA to view detailed technical specifications.
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