PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 20V Collector-Emitter Voltage (VCEO) and a 1A Continuous Collector Current. Operates with a -1A current rating and a 210MHz Gain Bandwidth Product. Packaged in a SOT-323 surface mount case, this RoHS and Lead Free component offers a maximum power dissipation of 500mW and an operating temperature range of -55°C to 150°C.
Frequency210MHz
PackageSOT-323
Current Rating-1A
MountingSurface Mount
Quick Jump:
Technical Specifications
Diodes ZUMT718TA technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
-180mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
-5V
Frequency
210MHz
Gain Bandwidth Product
210MHz
Height
1mm
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
20V
Max Collector Current
1A
Max Frequency
210MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
210MHz
DC Rated Voltage
-20V
Weight
0.000212oz
Width
1.26mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZUMT718TA Datasheet
Download the complete datasheet for Diodes ZUMT718TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.