ZVN3310ASTOB

N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET, offers a 100V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 200mA. Featuring a low drain-to-source resistance (Rds On Max) of 10 Ohms, this through-hole mount component is housed in a TO-92-3 compatible E-LINE package. Key performance specifications include a 5ns turn-on delay, 6ns turn-off delay, and 7ns fall time, with input capacitance at 40pF. Maximum power dissipation is rated at 625mW, operating across a temperature range of -55°C to 150°C.