N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for small signal applications. Features 60V drain-to-source breakdown voltage and 600mA continuous drain current. Offers a maximum drain-source on-resistance of 1 Ohm. Packaged in a TO-92-3 configuration for through-hole mounting. Operates within a temperature range of -55°C to 150°C with 700mW power dissipation.
PackageTO-92-3
Current Rating600mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVN4206A technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
600mA
Current Rating
600mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
1.5R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
1R
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
4.01mm
Input Capacitance
100pF
Lead Free
Lead Free
Length
4.77mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
700mW
Radiation Hardening
No
Rds On Max
1R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
3V
Turn-Off Delay Time
12ns
Turn-On Delay Time
8ns
DC Rated Voltage
60V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVN4206A Datasheet
Download the complete datasheet for Diodes ZVN4206A to view detailed technical specifications.
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