N-channel JFET featuring 60V drain-source voltage and 1.1A continuous drain current. This silicon metal-oxide semiconductor FET offers a low drain-to-source resistance of 450mΩ and a maximum power dissipation of 850mW. Designed for through-hole mounting in a TO-92 compatible E-Line package, it operates across a temperature range of -55°C to 150°C. Key switching characteristics include an 8ns turn-on delay and a 30ns turn-off delay.
PackageTO-92-3
Current Rating1.1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVN4306AV technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 1.1A |
| Current Rating | 1.1A |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.01mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 850mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 330mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 60V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZVN4306AV Datasheet
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