ZVN4306GTA

N-Channel MOSFET, 60V, 2.1A, 330mR Rds(on), SOT-223

N-Channel Power MOSFET, 60V Drain-Source Voltage, 2.1A Continuous Drain Current, and 330mR maximum Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a 1.3V threshold voltage, 350pF input capacitance, and fast switching times with 8ns turn-on and 16ns fall times. Packaged in a SOT-223 surface-mount case, it offers a maximum power dissipation of 3W and operates across a temperature range of -55°C to 150°C. RoHS compliant and lead-free.

PackageSOT-223

Current Rating2.1A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Diodes ZVN4306GTA technical specifications.

General

Package/Case	SOT-223
Continuous Drain Current (ID)	2.1A
Current Rating	2.1A
Drain to Source Resistance	450mR
Drain to Source Voltage (Vdss)	60V
Drain-source On Resistance-Max	330mR
Fall Time	16ns
Gate to Source Voltage (Vgs)	20V
Height	1.65mm
Input Capacitance	350pF
Lead Free	Lead Free
Length	6.7mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3W
Mount	Surface Mount
Number of Channels	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Radiation Hardening	No
Rds On Max	330mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Threshold Voltage	1.3V
Turn-Off Delay Time	30ns
Turn-On Delay Time	8ns
DC Rated Voltage	60V
Weight	0.000282oz
Width	3.7mm