N-Channel JFET with 100V Drain-to-Source Breakdown Voltage and 320mA Continuous Drain Current. Features a 4.5 Ohm Drain-to-Source Resistance and 700mW Power Dissipation. This single-element, through-hole mounted transistor operates from -55°C to 150°C and is housed in a TO-92 compatible E-Line package. Turn-on delay is 7ns, fall time is 12ns, and turn-off delay is 15ns.
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| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 320mA |
| Current Rating | 320mA |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 4.5R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.01mm |
| Input Capacitance | 75pF |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 100V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
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