N-Channel JFET with 100V Drain-to-Source Breakdown Voltage and 320mA Continuous Drain Current. Features a 4.5 Ohm Drain-to-Source Resistance and 700mW Power Dissipation. This single-element, through-hole mounted transistor operates from -55°C to 150°C and is housed in a TO-92 compatible E-Line package. Turn-on delay is 7ns, fall time is 12ns, and turn-off delay is 15ns.
PackageTO-92-3
Current Rating320mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVNL110A technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
320mA
Current Rating
320mA
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
4.5R
Drain to Source Voltage (Vdss)
100V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
4.01mm
Input Capacitance
75pF
Lead Free
Lead Free
Length
4.77mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
700mW
Radiation Hardening
No
Rds On Max
3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
7ns
DC Rated Voltage
100V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVNL110A Datasheet
Download the complete datasheet for Diodes ZVNL110A to view detailed technical specifications.
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