N-channel JFET transistor for small signal applications. Features a 100V drain-source voltage (Vdss) and 320mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 3 Ohms maximum. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-92 compatible E-LINE package for through-hole mounting.
PackageTO-92-3
Current Rating320mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZVNL110ASTZ technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
320mA
Current Rating
320mA
Drain to Source Resistance
4.5R
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
3R
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
4.01mm
Input Capacitance
75pF
Lead Free
Lead Free
Length
4.77mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Through Hole
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
700mW
Radiation Hardening
No
Rds On Max
3R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
7ns
DC Rated Voltage
100V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVNL110ASTZ Datasheet
Download the complete datasheet for Diodes ZVNL110ASTZ to view detailed technical specifications.
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