
N-channel JFET transistor for small signal applications. Features a 100V drain-source voltage (Vdss) and 320mA continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 3 Ohms maximum. Operates across a wide temperature range from -55°C to 150°C. Packaged in a TO-92 compatible E-LINE package for through-hole mounting.
Diodes ZVNL110ASTZ technical specifications.
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 320mA |
| Current Rating | 320mA |
| Drain to Source Resistance | 4.5R |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 3R |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.01mm |
| Input Capacitance | 75pF |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 100V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZVNL110ASTZ to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
