N-channel JFET transistor for small signal applications, featuring a 200V drain-to-source breakdown voltage and 180mA continuous drain current. This silicon FET offers a low 10 Ohm drain-source on-resistance and a 1.5V threshold voltage. Designed for through-hole mounting, it comes in a TO-92-3 package with a maximum power dissipation of 700mW and operates across a wide temperature range of -55°C to 150°C. Key switching characteristics include an 8ns turn-on delay and 20ns turn-off delay.
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| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 180mA |
| Current Rating | 180mA |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 10R |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.01mm |
| Input Capacitance | 85pF |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 200V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
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