ZVNL120A

N-channel JFET transistor for small signal applications, featuring a 200V drain-to-source breakdown voltage and 180mA continuous drain current. This silicon FET offers a low 10 Ohm drain-source on-resistance and a 1.5V threshold voltage. Designed for through-hole mounting, it comes in a TO-92-3 package with a maximum power dissipation of 700mW and operates across a wide temperature range of -55°C to 150°C. Key switching characteristics include an 8ns turn-on delay and 20ns turn-off delay.