ZVNL120ASTZ

N-channel JFET, 200V drain-to-source breakdown voltage, 180mA continuous drain current, and 10 Ohm drain-to-source resistance. This single-element silicon transistor features a TO-92 compatible E-Line package, suitable for through-hole mounting. Operating across a wide temperature range from -55°C to 150°C, it offers a maximum power dissipation of 700mW. Key switching characteristics include an 8ns turn-on delay and 20ns turn-off delay, with an input capacitance of 85pF.