ZVP2106GTA

P-channel MOSFET, 60V drain-source voltage, 450mA continuous drain current, and 5 Ohm drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a 1-element configuration and a 20V gate-to-source voltage. It is supplied in a SOT-223 surface-mount package, offering a maximum power dissipation of 2W and operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.