P-channel JFET with 50V drain-source voltage and 175mA continuous drain current. Features 10 Ohm drain-source on-resistance, -2V threshold voltage, and 20V gate-source voltage. This silicon metal-oxide semiconductor FET is housed in a TO-92-3 package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 625mW. RoHS compliant and lead-free.
PackageTO-92-3
Current Rating-175mA
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Diodes ZVP4105A technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 175mA |
| Current Rating | -175mA |
| Drain to Source Resistance | 10R |
| Drain to Source Voltage (Vdss) | 50V |
| Drain-source On Resistance-Max | 10R |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.01mm |
| Input Capacitance | 40pF |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -50V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZVP4105A Datasheet
Download the complete datasheet for Diodes ZVP4105A to view detailed technical specifications.
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