P-channel JFET with 50V drain-source voltage and 175mA continuous drain current. Features 10 Ohm drain-source on-resistance, -2V threshold voltage, and 20V gate-source voltage. This silicon metal-oxide semiconductor FET is housed in a TO-92-3 package, suitable for through-hole mounting. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 625mW. RoHS compliant and lead-free.
PackageTO-92-3
Current Rating-175mA
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Diodes ZVP4105A technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
175mA
Current Rating
-175mA
Drain to Source Resistance
10R
Drain to Source Voltage (Vdss)
50V
Drain-source On Resistance-Max
10R
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
4.01mm
Input Capacitance
40pF
Lead Free
Lead Free
Length
4.77mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Channels
1
Package Quantity
4000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
10R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-2V
Turn-Off Delay Time
18ns
Turn-On Delay Time
10ns
DC Rated Voltage
-50V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZVP4105A Datasheet
Download the complete datasheet for Diodes ZVP4105A to view detailed technical specifications.
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