The ZVP4525E6TC is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.1W and is packaged in a surface mount SOT-23-6 package. The transistor has a drain to source breakdown voltage of -250V and a drain to source resistance of 14R. It is RoHS compliant and available in quantities of 10,000 per reel.
PackageSOT-23-6
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Diodes ZVP4525E6TC technical specifications.
General
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 197mA |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 14R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 3.78ns |
| Gate to Source Voltage (Vgs) | 40V |
| Input Capacitance | 73pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 14R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZVP4525E6TC Datasheet
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