PNP Silicon Bipolar Junction Transistor (BJT) in a SOT-23-6 package. Features a continuous collector current of -3.5A, collector-emitter breakdown voltage of 20V, and a transition frequency of 110MHz. Designed for surface mounting with a maximum power dissipation of 1.7W. Operates across a wide temperature range from -55°C to 150°C. This component is Lead Free, RoHS Compliant, and REACH SVHC Compliant.
PackageSOT-23-6
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes ZX5T2E6TA technical specifications.
General
Package/Case
SOT-23-6
Collector Base Voltage (VCBO)
-25V
Collector Emitter Breakdown Voltage
20V
Collector-emitter Voltage-Max
130mV
Continuous Collector Current
-3.5A
Emitter Base Voltage (VEBO)
-7.5V
Gain Bandwidth Product
110MHz
Height
1.3mm
Lead Free
Lead Free
Length
3.1mm
Max Breakdown Voltage
20V
Max Collector Current
3.5A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
110MHz
Weight
0.000529oz
Width
1.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZX5T2E6TA Datasheet
Download the complete datasheet for Diodes ZX5T2E6TA to view detailed technical specifications.
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