NPN bipolar junction transistor (BJT) for small signal applications, featuring a 6A continuous collector current and 60V collector-emitter breakdown voltage. This silicon transistor offers a 130MHz transition frequency and a minimum hFE of 55. Packaged in a SOT-223 surface-mount plastic package, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 3W.
Frequency130MHz
PackageSOT-223
Current Rating6A
MountingSurface Mount
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Technical Specifications
Diodes ZX5T851GTA technical specifications.
General
Package/Case
SOT-223
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
260mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
260mV
Continuous Collector Current
6A
Current Rating
6A
Emitter Base Voltage (VEBO)
7V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
1.65mm
hFE Min
55
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
60V
Max Collector Current
6A
Max Frequency
130MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
3W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
130MHz
DC Rated Voltage
60V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZX5T851GTA Datasheet
Download the complete datasheet for Diodes ZX5T851GTA to view detailed technical specifications.
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