N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 1.7A. Offers a low Drain-to-Source On-Resistance (Rds On) of 180mR. Packaged in a SOT-23-3 surface-mount case, this 1-element transistor operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 806mW. Includes fast switching characteristics with turn-on delay time of 2.4ns and fall time of 4.2ns.
PackageSOT-23-3
Current Rating1.7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXM61N02FTC technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
1.7A
Current Rating
1.7A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
20V
Fall Time
4.2ns
Gate to Source Voltage (Vgs)
12V
Height
1.02mm
Input Capacitance
160pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
806mW
Radiation Hardening
No
Rds On Max
180mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
7.8ns
Turn-On Delay Time
2.4ns
DC Rated Voltage
20V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXM61N02FTC Datasheet
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