ZXM61N03FTA

N-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in a SOT-23 package. This transistor features a 30V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 1.4A, with a maximum power dissipation of 625mW. It offers a low Drain-source On Resistance (Rds On) of 220mR and fast switching times, including a 1.9ns turn-on delay and 2.5ns fall time. Operating across a temperature range of -55°C to 150°C, this RoHS compliant component is ideal for various electronic applications.