P-channel JFET with 20V Drain-Source Voltage (Vdss) and 900mA Continuous Drain Current (ID). Features a maximum Drain-Source On Resistance (Rds On) of 600mR. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 625mW. This surface-mount transistor is housed in a SOT-23-3 package and is RoHS compliant.
PackageSOT-23-3
Current Rating-800mA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZXM61P02FTA technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
900mA
Current Rating
-800mA
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
600mR
Dual Supply Voltage
-20V
Fall Time
6.7ns
Gate to Source Voltage (Vgs)
12V
Height
1.02mm
Input Capacitance
150pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Nominal Vgs
-700mV
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
600mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
11.2ns
Turn-On Delay Time
2.9ns
DC Rated Voltage
-20V
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXM61P02FTA Datasheet
Download the complete datasheet for Diodes ZXM61P02FTA to view detailed technical specifications.
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