P-channel JFET for small signal applications. Features 20V drain-source voltage (Vdss) and 900mA continuous drain current (ID). Offers low on-resistance of 600mR at 10V/1A. Operates with a gate-source voltage (Vgs) up to 12V. Packaged in a SOT-23-3 surface-mount case, this silicon FET boasts fast switching times with a turn-on delay of 2.9ns and fall time of 6.7ns. Maximum power dissipation is 625mW.
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Diodes ZXM61P02FTC technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 900mA |
| Current Rating | -800mA |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 6.7ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 625mW |
| Rds On Max | 600mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Turn-Off Delay Time | 11.2ns |
| Turn-On Delay Time | 2.9ns |
| DC Rated Voltage | -20V |
| Weight | 0.000282oz |
| RoHS | Not Compliant |
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