P-channel, silicon, metal-oxide semiconductor FET for surface mount applications. Features a continuous drain current of 1.5A and a drain-source voltage of 30V. Offers a maximum drain-source on-resistance of 150mR. Operating temperature range from -55°C to 150°C. Packaged in a SOT-23-6 for tape and reel distribution.
PackageSOT-23-6
Current Rating-1.6A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZXM62P03E6TA technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
1.5A
Current Rating
-1.6A
Drain to Source Resistance
230mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
150mR
Fall Time
6.4ns
Gate to Source Voltage (Vgs)
12V
Height
1.3mm
Input Capacitance
330pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
806mW
Radiation Hardening
No
Rds On Max
150mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
13.9ns
Turn-On Delay Time
2.8ns
DC Rated Voltage
-30V
Weight
0.000529oz
Width
1.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXM62P03E6TA Datasheet
Download the complete datasheet for Diodes ZXM62P03E6TA to view detailed technical specifications.
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