N-Channel Silicon Metal-Oxide Semiconductor FET (MOSFET) for surface mount applications. Features a continuous drain current of 5.4A, a drain-source voltage of 20V, and a maximum drain-source on-resistance of 40mR. This single-element transistor offers a maximum power dissipation of 1.8W and operates within a temperature range of -55°C to 150°C. Packaged in MSOP with a height of 0.95mm, it is lead-free and RoHS compliant.
PackageMSOP
Current Rating5.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXM64N02XTA technical specifications.
General
Package/Case
MSOP
Continuous Drain Current (ID)
5.4A
Current Rating
5.4A
Drain to Source Resistance
50mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
40mR
Fall Time
9.6ns
Gate to Source Voltage (Vgs)
12V
Height
0.95mm
Input Capacitance
1.1nF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.8W
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
28.3ns
Turn-On Delay Time
5.7ns
DC Rated Voltage
20V
Weight
0.004938oz
Width
3.1mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXM64N02XTA Datasheet
Download the complete datasheet for Diodes ZXM64N02XTA to view detailed technical specifications.
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