
N-Channel Silicon Metal-Oxide Semiconductor FET (MOSFET) for surface mount applications. Features a continuous drain current of 5.4A, a drain-source voltage of 20V, and a maximum drain-source on-resistance of 40mR. This single-element transistor offers a maximum power dissipation of 1.8W and operates within a temperature range of -55°C to 150°C. Packaged in MSOP with a height of 0.95mm, it is lead-free and RoHS compliant.
Diodes ZXM64N02XTA technical specifications.
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