N-Channel Silicon Metal-Oxide Semiconductor FET (MOSFET) for surface mount applications. Features a continuous drain current of 5.4A, a drain-source voltage of 20V, and a maximum drain-source on-resistance of 40mR. This single-element transistor offers a maximum power dissipation of 1.8W and operates within a temperature range of -55°C to 150°C. Packaged in MSOP with a height of 0.95mm, it is lead-free and RoHS compliant.
PackageMSOP
Current Rating5.4A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes ZXM64N02XTA technical specifications.
General
| Package/Case | MSOP |
| Continuous Drain Current (ID) | 5.4A |
| Current Rating | 5.4A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 40mR |
| Fall Time | 9.6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.95mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28.3ns |
| Turn-On Delay Time | 5.7ns |
| DC Rated Voltage | 20V |
| Weight | 0.004938oz |
| Width | 3.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXM64N02XTA Datasheet
Download the complete datasheet for Diodes ZXM64N02XTA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
