Diodes
ZXM64N035GTA
Small Signal Field-Effect Transistor, 4.8A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Small Signal Field-Effect Transistor, 4.8A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
PackageTO-261-4
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXM64N035GTA technical specifications.
General
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 6.7A |
| Drain to Source Resistance | 62mR |
| Drain to Source Voltage (Vdss) | 35V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.65mm |
| Input Capacitance | 950pF |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20.5ns |
| Turn-On Delay Time | 4.2ns |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXM64N035GTA Datasheet
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