ZXM64N035L3

N-Channel Power MOSFET, 35V Drain-Source Voltage, 13A Continuous Drain Current, and 60mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a TO-220-3 through-hole package, 1.5W max power dissipation, and operates within a -55°C to 150°C temperature range. Key switching characteristics include an 8ns fall time, 4.2ns turn-on delay, and 20.5ns turn-off delay, with 950pF input capacitance. This RoHS compliant component is lead-free and suitable for various power applications.