N-Channel Power MOSFET, 35V Drain-Source Voltage, 13A Continuous Drain Current, and 60mΩ Max Drain-Source On-Resistance. This silicon, metal-oxide semiconductor FET features a TO-220-3 through-hole package, 1.5W max power dissipation, and operates within a -55°C to 150°C temperature range. Key switching characteristics include an 8ns fall time, 4.2ns turn-on delay, and 20.5ns turn-off delay, with 950pF input capacitance. This RoHS compliant component is lead-free and suitable for various power applications.
PackageTO-220-3
Current Rating13A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXM64N035L3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 35V |
| Drain-source On Resistance-Max | 60mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.82mm |
| Input Capacitance | 950pF |
| Lead Free | Lead Free |
| Length | 16.51mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20.5ns |
| Turn-On Delay Time | 4.2ns |
| DC Rated Voltage | 35V |
| Weight | 0.211644oz |
| Width | 10.66mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXM64N035L3 Datasheet
Download the complete datasheet for Diodes ZXM64N035L3 to view detailed technical specifications.
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