P-channel silicon MOSFET for small signal applications. Features 20V drain-source voltage (Vdss) and 3.5A continuous drain current (ID). Offers low 90mΩ drain-source on-resistance (Rds On Max). Operates across a -55°C to 150°C temperature range. Packaged in a compact MSOP-8 surface-mount case.
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| Package/Case | MSOP |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | -3.5A |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 90mR |
| Fall Time | 12.3ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.95mm |
| Input Capacitance | 900pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.8W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 45.5ns |
| Turn-On Delay Time | 5.6ns |
| DC Rated Voltage | -20V |
| Weight | 0.004938oz |
| Width | 3.1mm |
| RoHS | Compliant |
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