P-channel silicon MOSFET for small signal applications. Features 20V drain-source voltage (Vdss) and 3.5A continuous drain current (ID). Offers low 90mΩ drain-source on-resistance (Rds On Max). Operates across a -55°C to 150°C temperature range. Packaged in a compact MSOP-8 surface-mount case.
PackageMSOP
Current Rating-3.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes ZXM64P02XTA technical specifications.
General
Package/Case
MSOP
Continuous Drain Current (ID)
3.5A
Current Rating
-3.5A
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
90mR
Fall Time
12.3ns
Gate to Source Voltage (Vgs)
12V
Height
0.95mm
Input Capacitance
900pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.8W
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
45.5ns
Turn-On Delay Time
5.6ns
DC Rated Voltage
-20V
Weight
0.004938oz
Width
3.1mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXM64P02XTA Datasheet
Download the complete datasheet for Diodes ZXM64P02XTA to view detailed technical specifications.
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