Surface mount N-channel and P-channel dual-element silicon Metal-oxide Semiconductor FET with a 30V drain-source voltage and 6.4A continuous drain current. Features low 35mR drain-source on-resistance, 3ns turn-on delay, and 9.4ns fall time. Operates from -55°C to 150°C with 2.1W power dissipation. Packaged in SOIC-8 for tape and reel distribution.
PackageSOIC
Current Rating6.4A
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Diodes ZXMC3A16DN8TA technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.4A
Current Rating
6.4A
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
48mR
Fall Time
9.4ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
796pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
2.1W
Radiation Hardening
No
Rds On Max
35mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1V
Turn-Off Delay Time
21.6ns
Turn-On Delay Time
3ns
DC Rated Voltage
30V
Weight
0.00261oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMC3A16DN8TA Datasheet
Download the complete datasheet for Diodes ZXMC3A16DN8TA to view detailed technical specifications.
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