DIODES

ZXMC3A16DN8TA

Datasheet

N/P-Ch JFET, 30V, 6.4A ID, 35mR Rds On, SOIC-8

Diodes

ZXMC3A16DN8TA

Name: ZXMC3A16DN8TA Diodes
Brand: Diodes
SKU: ZXMC3A16DN8TA

N/P-Ch JFET, 30V, 6.4A ID, 35mR Rds On, SOIC-8

Surface mount N-channel and P-channel dual-element silicon Metal-oxide Semiconductor FET with a 30V drain-source voltage and 6.4A continuous drain current. Features low 35mR drain-source on-resistance, 3ns turn-on delay, and 9.4ns fall time. Operates from -55°C to 150°C with 2.1W power dissipation. Packaged in SOIC-8 for tape and reel distribution.

PackageSOIC

Current Rating6.4A

MountingSurface Mount

PolarityN-CHANNEL, P-CHANNEL

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Technical Specifications

Diodes ZXMC3A16DN8TA technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	6.4A
Current Rating	6.4A
Drain to Source Resistance	35mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	48mR
Fall Time	9.4ns
FET Type	N and P-Channel
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	796pF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.1W
Mount	Surface Mount
Number of Channels	2
Number of Elements	2
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL, P-CHANNEL
Power Dissipation	2.1W
Radiation Hardening	No
Rds On Max	35mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Threshold Voltage	1V
Turn-Off Delay Time	21.6ns
Turn-On Delay Time	3ns
DC Rated Voltage	30V
Weight	0.00261oz
Width	4mm