Surface mount N-channel and P-channel silicon Metal-oxide Semiconductor FET with 30V drain-source voltage and 5.4A continuous drain current. Features low 65mΩ drain-source on-resistance and 1.7ns turn-on delay. Operates across a -55°C to 150°C temperature range, with 2.1W maximum power dissipation. Packaged in SOIC-8 for tape and reel distribution.
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Diodes ZXMC3A17DN8TA technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.4A |
| Current Rating | 5.4A |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 70mR |
| Fall Time | 8.7ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 600pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 29.2ns |
| Turn-On Delay Time | 1.7ns |
| Weight | 0.00261oz |
| Width | 4mm |
| RoHS | Compliant |
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