The ZXMC3AM832TA is a dual N-CHANNEL P-CHANNEL MOSFET with a continuous drain current of 2.1A and a drain to source breakdown voltage of 30V. It has a drain to source resistance of 180mR and a maximum power dissipation of 1.7W. The device is packaged in a surface mount package and is RoHS compliant. It operates over a temperature range of -40°C to 125°C.
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Diodes ZXMC3AM832TA technical specifications.
General
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 190pF |
| Length | 3mm |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Rds On Max | 120mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 11.3ns |
| Turn-On Delay Time | 1.5ns |
| Weight | 0.010582oz |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMC3AM832TA Datasheet
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