The ZXMC3F31DN8TA is a dual N and P-channel junction field-effect transistor with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.8W and a continuous drain current of 4.9A. The device is packaged in a small outline R-PDSO-G8 package and is surface mountable. It has an input capacitance of 608pF and a drain to source resistance of 80mR. The ZXMC3F31DN8TA is not radiation hardened and is not RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Diodes ZXMC3F31DN8TA technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.9A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 21ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 608pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 1.9ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Diodes ZXMC3F31DN8TA Datasheet
Download the complete datasheet for Diodes ZXMC3F31DN8TA to view detailed technical specifications.
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