N-Channel and P-Channel Silicon Metal-oxide Semiconductor FET, SOIC-8 package. Features 60V drain-source breakdown voltage, 4.7A continuous drain current, and low 55mR drain-source on-resistance. Operates across a -55°C to 150°C temperature range with a 2.1W maximum power dissipation. Surface mountable with tape and reel packaging.
PackageSOIC
Current Rating4.7A
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Diodes ZXMC4559DN8TA technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.7A
Current Rating
4.7A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
75mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
105mR
Dual Supply Voltage
60V
Fall Time
10ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.063nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Nominal Vgs
1V
Number of Channels
2
Package Quantity
500
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Radiation Hardening
No
Rds On Max
55mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
35ns
Turn-On Delay Time
3.5ns
Weight
0.00261oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMC4559DN8TA Datasheet
Download the complete datasheet for Diodes ZXMC4559DN8TA to view detailed technical specifications.
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