N-Channel and P-Channel Silicon Metal-oxide Semiconductor FET, SOIC-8 package. Features 60V drain-source breakdown voltage, 4.7A continuous drain current, and low 55mR drain-source on-resistance. Operates across a -55°C to 150°C temperature range with a 2.1W maximum power dissipation. Surface mountable with tape and reel packaging.
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Diodes ZXMC4559DN8TA technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.7A |
| Current Rating | 4.7A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 105mR |
| Dual Supply Voltage | 60V |
| Fall Time | 10ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.063nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Channels | 2 |
| Package Quantity | 500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 3.5ns |
| Weight | 0.00261oz |
| Width | 4mm |
| RoHS | Compliant |
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