Surface mount N-channel and P-channel dual JFET with 60V drain-source voltage and 2.6A continuous drain current. Features low 55mΩ Rds On, 125mΩ drain-to-source resistance, and 1.25W power dissipation. Operates across a -55°C to 150°C temperature range with fast switching times including 3.5ns turn-on and 10ns fall times. This silicon metal-oxide semiconductor FET is housed in an SOIC-8 package and is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power2.1W
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Technical Specifications
Diodes ZXMC4559DN8TC technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 10ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.063nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 3.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMC4559DN8TC Datasheet
Download the complete datasheet for Diodes ZXMC4559DN8TC to view detailed technical specifications.
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