N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, 20V Drain-Source Breakdown Voltage, 2.4A Continuous Drain Current. Features 130mΩ Max Drain-Source On-Resistance, 700pF Input Capacitance, and 8.1ns Fall Time. Operates from -55°C to 150°C with 1.04W Max Power Dissipation. Surface mountable in an MSOP package.
PackageMSOP
Current Rating2.4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMD63N02XTA technical specifications.
General
Package/Case
MSOP
Continuous Drain Current (ID)
2.4A
Current Rating
2.4A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
150mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
130mR
Fall Time
8.1ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
0.95mm
Input Capacitance
700pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.04W
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.25W
Radiation Hardening
No
Rds On Max
130mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
13.5ns
Turn-On Delay Time
3.4ns
DC Rated Voltage
20V
Weight
0.004938oz
Width
3.1mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMD63N02XTA Datasheet
Download the complete datasheet for Diodes ZXMD63N02XTA to view detailed technical specifications.
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