N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, 20V Drain-Source Breakdown Voltage, 2.4A Continuous Drain Current. Features 130mΩ Max Drain-Source On-Resistance, 700pF Input Capacitance, and 8.1ns Fall Time. Operates from -55°C to 150°C with 1.04W Max Power Dissipation. Surface mountable in an MSOP package.
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Diodes ZXMD63N02XTA technical specifications.
| Package/Case | MSOP |
| Continuous Drain Current (ID) | 2.4A |
| Current Rating | 2.4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 130mR |
| Fall Time | 8.1ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.95mm |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 130mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.5ns |
| Turn-On Delay Time | 3.4ns |
| DC Rated Voltage | 20V |
| Weight | 0.004938oz |
| Width | 3.1mm |
| RoHS | Compliant |
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