ZXMHC10A07N8TC

Surface mount N-channel and P-channel junction field-effect transistor (JFET) with 100V Drain to Source Voltage (Vdss) and 1A Continuous Drain Current (ID). Features 700mR Rds On Max, 1.45R Drain to Source Resistance, and 138pF Input Capacitance. Operates across a -55°C to 150°C temperature range with a 870mW Max Power Dissipation. This 4-element silicon Metal-oxide Semiconductor FET is supplied in a tape and reel package.