Surface mount, 4-element, N-channel and P-channel junction field-effect transistor (JFET) designed for small signal applications. Features a 30V drain-source voltage (Vdss) and a continuous drain current (ID) of 3.36A. Offers a low drain-source on-resistance (Rds On) of 33mR. Operates within a temperature range of -55°C to 150°C. Packaged in SOIC for tape and reel distribution.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power1.35W
Quick Jump:
Technical Specifications
Diodes ZXMHC3F381N8TC technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.36A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 55mR |
| Fall Time | 21ns |
| FET Type | 2 N and 2 P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 430pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 870mW |
| Mount | Surface Mount |
| Number of Channels | 4 |
| Number of Elements | 4 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Power Dissipation | 1.35W |
| Radiation Hardening | No |
| Rds On Max | 33mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 1.9ns |
| Weight | 0.00261oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMHC3F381N8TC Datasheet
Download the complete datasheet for Diodes ZXMHC3F381N8TC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
