
Surface mount, 4-element, N-channel and P-channel junction field-effect transistor (JFET) designed for small signal applications. Features a 30V drain-source voltage (Vdss) and a continuous drain current (ID) of 3.36A. Offers a low drain-source on-resistance (Rds On) of 33mR. Operates within a temperature range of -55°C to 150°C. Packaged in SOIC for tape and reel distribution.
Diodes ZXMHC3F381N8TC technical specifications.
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