Surface mount, 4-element, N-channel and P-channel junction field-effect transistor (JFET) designed for small signal applications. Features a 30V drain-source voltage (Vdss) and a continuous drain current (ID) of 3.36A. Offers a low drain-source on-resistance (Rds On) of 33mR. Operates within a temperature range of -55°C to 150°C. Packaged in SOIC for tape and reel distribution.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power1.35W
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Technical Specifications
Diodes ZXMHC3F381N8TC technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3.36A
Drain to Source Resistance
80mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
55mR
Fall Time
21ns
FET Type
2 N and 2 P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
430pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
870mW
Mount
Surface Mount
Number of Channels
4
Number of Elements
4
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
1.35W
Radiation Hardening
No
Rds On Max
33mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1V
Turn-Off Delay Time
30ns
Turn-On Delay Time
1.9ns
Weight
0.00261oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMHC3F381N8TC Datasheet
Download the complete datasheet for Diodes ZXMHC3F381N8TC to view detailed technical specifications.
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