N-Channel Silicon FET, TO-261-4 package, offering a 450V Drain-Source Voltage (Vdss) and 140mA Continuous Drain Current (ID). Features a 50 Ohm maximum Drain-Source On Resistance (Rds On Max) and a 2W maximum power dissipation. Operates across a temperature range of -55°C to 150°C with fast switching speeds, including a 7ns turn-on delay and 16ns turn-off delay. This surface-mount device is lead-free and RoHS compliant.
PackageTO-261-4
Current Rating140mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN0545G4TA technical specifications.
General
Package/Case
TO-261-4
Continuous Drain Current (ID)
140mA
Current Rating
140mA
Drain to Source Resistance
50R
Drain to Source Voltage (Vdss)
450V
Drain-source On Resistance-Max
50R
Fall Time
10ns
FET Type
1 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.65mm
Input Capacitance
70pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
50R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
16ns
Turn-On Delay Time
7ns
DC Rated Voltage
450V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN0545G4TA Datasheet
Download the complete datasheet for Diodes ZXMN0545G4TA to view detailed technical specifications.
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