N-Channel Silicon FET, TO-261-4 package, offering a 450V Drain-Source Voltage (Vdss) and 140mA Continuous Drain Current (ID). Features a 50 Ohm maximum Drain-Source On Resistance (Rds On Max) and a 2W maximum power dissipation. Operates across a temperature range of -55°C to 150°C with fast switching speeds, including a 7ns turn-on delay and 16ns turn-off delay. This surface-mount device is lead-free and RoHS compliant.
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Diodes ZXMN0545G4TA technical specifications.
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 140mA |
| Current Rating | 140mA |
| Drain to Source Resistance | 50R |
| Drain to Source Voltage (Vdss) | 450V |
| Drain-source On Resistance-Max | 50R |
| Fall Time | 10ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.65mm |
| Input Capacitance | 70pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 50R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 450V |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
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