N-Channel Power MOSFET, 100V Vdss, 2A continuous drain current, and 250mΩ Rds On. This silicon Metal-oxide Semiconductor FET features a TO-261AA package, surface mount capability, and a maximum power dissipation of 2W. Operating temperature range is -55°C to 150°C. Includes low turn-on/off delay times and input capacitance.
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| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 250mR |
| Fall Time | 3.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.65mm |
| Input Capacitance | 405pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 250mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 8ns |
| Turn-On Delay Time | 3.4ns |
| Weight | 0.000282oz |
| Width | 3.7mm |
| RoHS | Compliant |
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