N-Channel Silicon Metal-oxide Semiconductor FET (MOSFET) for surface mount applications. Features a 100V Drain-Source Voltage (Vdss) and a continuous drain current (ID) of 2.4A. Offers a low Drain-Source On-Resistance (Rds On) of 350mR maximum. Includes fast switching times with a turn-on delay of 2.7ns and a fall time of 3.5ns. Packaged in a SOT-223 case, this RoHS and REACH SVHC compliant component operates from -55°C to 150°C.
PackageSOT-223
Current Rating1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN10A11GTA technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
2.4A
Current Rating
1A
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
350mR
Fall Time
3.5ns
Gate to Source Voltage (Vgs)
20V
Height
1.65mm
Input Capacitance
274pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.9W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
350mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
7.4ns
Turn-On Delay Time
2.7ns
DC Rated Voltage
100V
Weight
0.000282oz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN10A11GTA Datasheet
Download the complete datasheet for Diodes ZXMN10A11GTA to view detailed technical specifications.
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