N-channel MOSFET featuring 100V drain-source voltage and 4A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 125mΩ drain-source on-resistance. Designed for surface mounting in a SOT-223 package, it operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 3.9W. Key switching characteristics include a 4.9ns turn-on delay and 9.4ns fall time.
PackageSOT-223
MountingSurface Mount
PolarityN-CHANNEL
Power3.9W
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Diodes ZXMN10A25GTA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Diodes ZXMN10A25GTA technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 125mR |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.65mm |
| Input Capacitance | 859pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.9W |
| Radiation Hardening | No |
| Rds On Max | 125mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 4.9ns |
| Weight | 0.000282oz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMN10A25GTA Datasheet
Download the complete datasheet for Diodes ZXMN10A25GTA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
