N-Channel Silicon Metal-Oxide Semiconductor FET, a 2-element JFET with a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 7.7A. Features include a low Drain-Source On Resistance (Rds On) of 25mR, a Gate-to-Source Voltage (Vgs) of 12V, and fast switching times with a turn-on delay of 7.9ns and fall time of 30.6ns. This surface mount device, packaged in SOIC, offers a maximum power dissipation of 2.1W and operates within a temperature range of -55°C to 150°C. It is RoHS and Lead Free compliant.
PackageSOIC
Current Rating6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN2A04DN8TA technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.7A
Current Rating
6A
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
25mR
Fall Time
30.6ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
1.88nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.1W
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
50.5ns
Turn-On Delay Time
7.9ns
DC Rated Voltage
20V
Weight
0.00261oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN2A04DN8TA Datasheet
Download the complete datasheet for Diodes ZXMN2A04DN8TA to view detailed technical specifications.
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