
N-Channel Silicon Metal-Oxide Semiconductor FET, a 2-element JFET with a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 7.7A. Features include a low Drain-Source On Resistance (Rds On) of 25mR, a Gate-to-Source Voltage (Vgs) of 12V, and fast switching times with a turn-on delay of 7.9ns and fall time of 30.6ns. This surface mount device, packaged in SOIC, offers a maximum power dissipation of 2.1W and operates within a temperature range of -55°C to 150°C. It is RoHS and Lead Free compliant.
Diodes ZXMN2A04DN8TA technical specifications.
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