ZXMN2A14FTA

N-Channel Silicon Metal-Oxide Semiconductor FET, SOT-23-3 package, offering a 20V Drain to Source Breakdown Voltage and 4.1A Continuous Drain Current. Features a low Drain-source On Resistance of 60mR (max) and a 3.3A current rating. This single-element transistor boasts fast switching speeds with a 4ns Turn-On Delay Time and 9.5ns Fall Time, operating from -55°C to 150°C with 1.5W Power Dissipation. Surface mountable and compliant with RoHS and REACH SVHC standards.