Diodes
ZXMN2AM832TA
Small Signal Field-Effect Transistor, 2.9A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 2 MM, MINIATURE, MLP, 8 PIN
Small Signal Field-Effect Transistor, 2.9A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 2 MM, MINIATURE, MLP, 8 PIN
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN2AM832TA technical specifications.
General
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 120mR |
| Fall Time | 1.31ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 1.55ns |
| Turn-On Delay Time | 2.31ns |
| Weight | 0.010582oz |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZXMN2AM832TA Datasheet
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