N-Channel Silicon Metal-oxide Semiconductor FET, SOT-23 package, featuring 20V Drain-Source Voltage (Vdss) and 4.3A Continuous Drain Current (ID). This single-element field-effect transistor offers a low Drain-Source On Resistance (Rds On) of 55mR. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.5W. The device supports surface mounting and is supplied on tape and reel, meeting RoHS and REACH SVHC compliance.
PackageSOT-23-3
MountingSurface Mount
PolarityN-CHANNEL
Power1.5W
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Technical Specifications
Diodes ZXMN2B14FHTA technical specifications.
General
Package/Case
SOT-23-3
Continuous Drain Current (ID)
4.3A
Drain to Source Resistance
55mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
55mR
Fall Time
5.2ns
Gate to Source Voltage (Vgs)
8V
Height
1.02mm
Input Capacitance
872pF
Lead Free
Lead Free
Length
3.04mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.5W
Radiation Hardening
No
Rds On Max
55mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
30ns
Turn-On Delay Time
3.7ns
Weight
0.000282oz
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN2B14FHTA Datasheet
Download the complete datasheet for Diodes ZXMN2B14FHTA to view detailed technical specifications.
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