Surface mount N-channel JFET with 30V drain-source voltage and 8.5A continuous drain current. Features low 20mR drain-source on-resistance, 1.89nF input capacitance, and fast switching times with 5.2ns turn-on and 38.1ns turn-off delay. Operates across a -55°C to 150°C temperature range, with 2.15W maximum power dissipation. Packaged in SOIC-8 for tape and reel distribution, this component is lead-free and RoHS compliant.
PackageSOIC
Current Rating6.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes ZXMN3A04DN8TA technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8.5A
Current Rating
6.8A
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
20mR
Fall Time
20.2ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.89nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.15W
Mount
Surface Mount
Number of Channels
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
20mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
38.1ns
Turn-On Delay Time
5.2ns
DC Rated Voltage
30V
Weight
0.00261oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZXMN3A04DN8TA Datasheet
Download the complete datasheet for Diodes ZXMN3A04DN8TA to view detailed technical specifications.
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